K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. Unique ID for Copyright Protection? Two types of operations are available: The system design must be able to mask out the invalid block s via address mapping.

Line Protection, Backups BX Added addressing method for program operation 0. Only the Read Status command and Reset command are valid while programming is in progress. The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed.

This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. Commands, address and data are latched on the rising edge of the WE pulse.


K9F2G08U0M datasheet, Pinout ,application circuits M X 8 Bit / M X 16 Bit NAND Flash Memory

Serial access may be done after power-on without latency. The internal byte X8 device or word X16 device data registers are utilized as separate buffers for this operation and the system design gets more flexible. If program operation results in an error, map out the block including the page in error and copy the target data to another block.

Please create an account or Sign in. Buffer memory of the controller.

256M X 8 Bit / 128M X 16 Bit NAND Flash Memory

The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage k9r2g08u0m other portable applications requiring non-volatility. Refer to table 2 for specific Status Register definitions. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area.

In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. An internal voltage detector disables all functions whenever Vcc is below about 1.


The device provides cache program in a block. Invalid blocks are defined as blocks that contain one or more bad bits.

The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. Auto-page read function is enabled only when PRE pin is tied to Vcc.


If reset command FFh is written at Ready state, the device goes into Busy for maximum 5us. Do not erase or program factory-marked bad blocks. Figure 14 shows the operation sequence. The following possible failure modes should be considered to implement a highly reliable system.

Each of the 32 cells resides in a different page. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.

Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. The power-on auto-read is enabled when PRE pin is tied to Datashet.

The Erase Confirm command D0h following the block address loading initiates the internal erasing process. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. After writing the first set of data up to byte X8 device or word X16 device into the selected cache registers, Cache Program command 15h instead of actual Page Program 10h is inputted to make cache registers free and to start internal program operation.